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| 3.6V 0.5W RF Power Amplifier IC for DECT ITT2206GJ FEATURES * * * * * * * * Single Positive Supply 57% Power Added Efficiency Operation down to 1.2 V 100% Duty Cycle 1800 to 2000 MHz Operation 8 Pin Full Downset MSOP Plastic Package Accommodates Battery Charging Conditions up to 5.6 Volts (R) Self-Aligned MSAG -Lite MESFET Process 8 Lead MSOP Package Package bottom is electrical and thermal ground DESCRIPTION The ITT2206GJ is a DECT Power amplifier based on GaAsTEK's Self-Aligned MSAG MESFET Process. This product is designed for use in 3.6 V DECT handsets and base stations. MAXIMUM RATINGS (Beyond these limits, the device may be damaged or device reliability reduced. Functional operation at absolute-maximum-rated conditions is not implied.) Rating DC Supply Voltage RF Input Power Junction Temperature Storage Temperature Range Operating Temperature Range Moisture Sensitivity Symbol VDD PIN TJ TSTG TOPER Value 6.0 10 150 -40 to +150 -40 to +100 JEDEC Level 1 Unit V mW C C C ELECTRICAL CHARACTERISTICS VDD= +3.6 V, PIN= -2 dBm, Duty Cycle = 100 %, TS board shown in Figure 9. = 37 C (Note 1), measured on evaluation Characteristic Frequency Range Output Power (1900 MHz) Power Added Efficiency (1900 MHz) Drain Current (1900MHz) Harmonics Input VSWR Off Isolation (VDD=0 V) Thermal Resistance, Junction to soldering point (Ts) (Note 1) Load Mismatch (VDD = 4.5 V, VSWR = 5:1, PIN = -2 dBm) Stability (PIN = -2 to 2 dBm, VDD = 0-5.0 V, Load VSWR = 5:1, all phases) Note 1: Note 2: Symbol POUT IDD 2o 3o -- -- -- -- -- Min 1880 25.9 52 38 C/W No Degradation in Power Output All non-harmonically related outputs more than 60 dB below desired signal Typ 1900 26.9 57 228 -37 -38 1.3:1 44 25 Max 1930 27.9 330 -30 -34 2.0:1 Unit MHz dBm % mA dBc -- dB Ts is the temperature measured at the soldering point of the downset paddle on the bottom of the IC. Output power and efficiency have been optimized for input drive levels between -2 to +2 dBm. Stability is only specified within this range. For operation outside of this range, contact the factory. Specifications Subject to Change Without Notice 902407 D, January 2000 GaAsTEK 5310 Valley Park Drive Roanoke, VA 24019 USA www.gaastek.com Tel: 1-540-563-3949 1-888-563-3949 (USA) Fax: 1-540-563-8616 1 3.6V 0.5W RF Power Amplifier IC for DECT ITT2206GJ TYPICAL CHARACTERISTICS (Measured data from process nominal devices) 6 65 60 6.0 5.5 PAE 5.0 4.5 4.0 3.0 2.5 2.0 1.5 VDD = 3.6 V VSWR 1.0 0.5 1950 0.0 2000 VSWR 3.5 POUT P DISS (W) = I DD3 * VDD3 - POUT 5 Pout (dBm) and PAE (%) 55 50 45 40 35 30 25 20 15 10 5 4 3 2 1 0 -50 0 50 100 150 Temperature, TS (C) PIN = -2 dBm 0 1800 1850 1900 Frequency (MHz) Figure 1. Maximum operating temperature (TS) to maintain <150C junction temperature. 30 25 20 P O U T (dBm) 15 30 10 20 5 0 0 1 2 3 4 5 6 Sup p ly Volta g e (Vo lts) P I N = -2 dBm f = 19 0 0 MHz 10 0 POU T 70 60 50 PAE PAE (% ) 40 Figure 2. Output power, power added efficiency, and input VSWR vs. frequency 30 20 VDD = 3.6 V PIN = -2 dBm fo = 1900 MHz 10 0 -10 -20 -30 2 3 4 5 Figure 3. Output power and power added efficiency vs. supply voltage Figure 4. Harmonics Specifications Subject to Change Without Notice 902407 D, January 2000 GaAsTEK 5310 Valley Park Drive Roanoke, VA 24019 USA www.gaastek.com Tel: 1-540-563-3949 1-888-563-3949 (USA) Fax: 1-540-563-8616 2 3.6V 0.5W RF Power Amplifier IC for DECT ITT2206GJ TYPICAL CHARACTERISTICS (Measured data from process nominal devices) 30 POUT 25 20 15 10 PIN = -2 dBm 5 0 -50 0 50 Temperature TS (C) VDD = 3.0 V Freq=1900 MHz 50 0 100 5 0 -50 0 50 Temperature TS (C) 300 250 IDD 200 I DD (ma) 150 100 30 P OUT 25 20 15 10 P IN = -2 dBm V DD = 3.2 V Freq=1900 MHz IDD 300 250 200 150 100 50 0 100 I DD (ma) POUT (dBm) POUT (dBm) Figure 5. Output power and drain current vs. temperature at VDD=+3.0V 30 POUT 25 IDD P OUT (dBm) 20 15 10 P IN = -2 dBm 5 0 -50 0 50 Temperature TS (C) V DD = 3.6 V Freq=1900 MHz 50 0 100 200 150 100 I DD (ma) 250 300 Figure 6. Output power and drain current vs. temperature at VDD=+3.2V Figure 7. Output power and drain current vs. temperature at VDD=+3.6V Specifications Subject to Change Without Notice 902407 D, January 2000 GaAsTEK 5310 Valley Park Drive Roanoke, VA 24019 USA www.gaastek.com Tel: 1-540-563-3949 1-888-563-3949 (USA) Fax: 1-540-563-8616 3 3.6V 0.5W RF Power Amplifier IC for DECT ITT2206GJ APPLICATION INFORMATION +VDD T7 C2 C3 C4 T8 L3 1 8 RFIN T1 C1 T2 L1 R1 T3 RFOUT T5 C6 C5 2 7 3 6 T4 L2 4 5 Full-Downset Paddle To Board Ground Figure 8. Evaluation Board Schematic List of components: Transmission Lines (Grounded Coplanar Waveguide) C1 = 0.7 pF multilayer ceramic chip capacitor T1 = 0.140" 50 C2 = C3 = C4 = C6 = 100 pF multilayer ceramic chip capacitor T2 = 0.110" 50 C5 = 2.2 pF multilayer ceramic chip capacitor T3 = 0.100" 50 L1 = 2.7 nH chip inductor T4 = 0.400" 75 L2 = 3.3 nH chip inductor T5 = 0.195" 50 L3 = 27 nH chip inductor T6 = 0.280" 50 R1 = 300 chip resistor T7=78 = 0.090" 75 60 mil GETEK Board Figure 9. Evaluation Board Layout Figure 10. 50 Lead Transition Specifications Subject to Change Without Notice 902407 D, January 2000 GaAsTEK 5310 Valley Park Drive Roanoke, VA 24019 USA www.gaastek.com Tel: 1-540-563-3949 1-888-563-3949 (USA) Fax: 1-540-563-8616 4 3.6V 0.5W RF Power Amplifier IC for DECT ITT2206GJ DESIGNING WITH THE ITT2206GJ The ITT2206GJ is built using a near-enhancement mode FET that operates from a single supply voltage. A negative voltage is not required because the FET is designed to operate with a +0V DC gate bias. There is no impedance matching or RF choking on this IC - these functions are supplied externally. This approach offers the highest level of performance, the lowest bill of materials cost, and far fewer components than a discrete design. Output power and efficiency have been optimized for DECT conditions. Input power must be kept between -2 and +2dBm. To duplicate ITT2206GJ data sheet performance, your circuit board must recreate the same impedances developed on this evaluation board. The table below has one-port s-parameter measurements looking into the traces on the evaluation board. S-parameters of the ITT2206GJ are not supplied because the device is designed to operate under large-signal conditions. Freq VDD1 Pin 1 RFIN/VGG1 Pin 2 VGG2 Pin 4 RFOUT/VDD3 Pin 7 VDD2 Pin 8 GHz Mag Ang Mag Ang Mag Ang Mag Ang Mag Ang 0.2 0.98045 178.38 0.15583 92.45 0.98634 159.96 0.53341 119.98 0.99255 178.98 0.3 0.94299 158.86 0.34874 -79.64 0.99012 150.97 0.32398 106.05 0.97095 163.41 0.4 0.97932 -171.16 0.61727 89.09 0.98896 141.89 0.20397 98.78 0.98118 -178.46 0.5 0.98910 -178.37 0.53105 68.98 0.98414 132.81 0.10550 90.87 0.98448 -176.22 0.6 0.99498 177.21 0.81116 49.51 0.98671 124.13 0.01912 95.87 0.99955 176.46 0.7 0.99236 174.45 0.87096 32.24 0.98308 115.73 0.05548 -108.06 0.99916 173.24 0.8 0.99399 172.25 0.84304 20.09 0.98482 107.57 0.12170 -111.09 1.00072 170.74 0.9 0.99541 170.17 0.86887 16.78 0.98514 99.90 0.18593 -116.17 1.00140 168.47 1.0 0.99503 168.20 0.87209 9.18 0.98562 92.35 0.24519 -121.18 1.00119 166.28 1.1 0.99279 166.32 0.87044 1.42 0.97997 85.32 0.30304 -126.47 0.99926 164.20 1.2 0.99285 164.31 0.83274 -4.47 0.98220 78.49 0.35920 -131.80 0.99991 161.99 1.3 0.99423 162.46 0.80852 -11.26 0.98249 72.12 0.41315 -137.20 0.99956 159.92 1.4 0.98574 159.89 0.74573 -16.03 0.98284 65.97 0.46330 -142.60 0.99277 157.02 1.5 0.88116 157.23 0.66751 -21.70 0.97828 60.11 0.51088 -148.03 0.86762 154.31 1.6 0.97552 161.35 0.60211 -24.92 0.98255 54.23 0.55789 -153.43 0.98555 158.39 1.7 0.98767 158.42 0.53753 -28.44 0.98167 48.79 0.59900 -158.95 0.99642 155.25 1.8 0.99039 156.35 0.45804 -27.44 0.98173 43.48 0.63867 -164.21 0.99918 152.78 1.9 0.99244 154.61 0.41128 -25.54 0.98234 38.27 0.67512 -169.36 1.00119 150.69 2.0 0.98742 152.93 0.36682 -20.92 0.97956 33.43 0.70454 -174.44 0.99355 148.30 2.1 0.99010 151.31 0.34855 -16.52 0.97866 28.52 0.73360 -178.67 0.88062 147.26 2.2 0.98911 149.68 0.32313 -13.38 0.97966 23.87 0.76239 175.86 0.99684 146.97 2.3 0.99139 148.11 0.30695 -8.01 0.98028 19.13 0.78572 171.11 1.00029 144.53 2.4 0.98809 146.33 0.30024 -0.16 0.97910 14.65 0.80560 166.68 1.00005 142.46 2.5 0.99058 144.56 0.32491 3.85 0.97652 10.29 0.82474 162.24 1.00010 140.35 2.6 0.98513 142.80 0.32429 4.54 0.97751 5.87 0.83818 157.93 0.99560 138.31 2.7 0.98991 140.66 0.31415 7.56 0.97715 1.53 0.86018 153.55 0.99891 136.04 2.8 0.97904 138.58 0.31418 14.28 0.97600 -2.68 0.87076 149.33 0.98388 133.36 2.9 0.94926 136.15 0.33349 18.76 0.97526 -7.00 0.88376 145.18 0.95012 130.27 3.0 0.90603 138.55 0.36476 23.39 0.97179 -11.28 0.89423 141.16 0.86390 133.79 3.1 0.96258 137.61 0.43170 21.35 0.96761 -15.40 0.90136 136.54 0.95789 133.92 Specifications Subject to Change Without Notice 902407 D, January 2000 GaAsTEK 5310 Valley Park Drive Roanoke, VA 24019 USA www.gaastek.com Tel: 1-540-563-3949 1-888-563-3949 (USA) Fax: 1-540-563-8616 5 3.6V 0.5W RF Power Amplifier IC for DECT ITT2206GJ Freq GHz 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9 4.0 4.1 4.2 4.3 4.4 4.5 4.6 4.7 4.8 4.9 5.0 5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 6.0 VDD1 Pin 1 Mag Ang 0.97824 135.30 0.98600 133.22 0.97581 131.03 0.97510 128.55 0.95375 126.87 0.95057 127.45 0.97376 125.97 0.97682 123.62 0.98005 121.79 0.98137 119.83 0.97884 118.09 0.97918 116.42 0.97904 114.45 0.97991 112.45 0.97809 110.26 0.96567 108.32 0.96153 105.69 0.93877 103.67 0.89436 102.91 0.88960 104.77 0.92614 104.42 0.94661 102.27 0.95985 100.14 0.96135 97.63 0.95723 95.59 0.95195 93.78 0.94291 92.04 0.94307 90.43 0.94249 89.05 RFIN/VGG1 Pin 2 Mag Ang 0.42416 18.54 0.44491 18.34 0.46286 15.87 0.47492 13.72 0.48711 11.01 0.49197 7.38 0.48573 2.45 0.46779 -0.28 0.45180 -4.24 0.42656 -7.50 0.39991 -11.55 0.36462 -15.55 0.32379 -19.79 0.27421 -24.08 0.21778 -28.21 0.15094 -30.95 0.07907 -24.06 0.03254 37.56 0.11563 93.79 0.17035 81.80 0.20983 84.90 0.26841 84.54 0.32306 81.90 0.36853 77.62 0.40466 73.11 0.43174 69.62 0.45333 66.86 0.48474 63.83 0.50533 59.87 VGG2 Pin 4 Mag Ang 0.96919 -19.53 0.96815 -23.97 0.96856 -28.22 0.96669 -32.53 0.96540 -36.99 0.96407 -41.44 0.96212 -46.11 0.96054 -50.67 0.96034 -55.50 0.95559 -60.49 0.95544 -65.64 0.95345 -70.99 0.95303 -76.48 0.95103 -82.34 0.94710 -88.30 0.94266 -94.72 0.93632 -101.21 0.93172 -108.15 0.90196 -115.16 0.91026 -120.16 0.92716 -128.19 0.92694 -136.71 0.92817 -145.26 0.92438 -154.07 0.91805 -163.10 0.91529 -172.11 0.90561 178.78 0.91067 169.22 0.90904 159.64 RFOUT/VDD3 Pin 7 Mag Ang 0.90933 132.45 0.92075 128.19 0.91634 123.51 0.92419 117.78 0.91573 111.37 0.88717 101.63 0.67487 79.43 0.46027 156.66 0.84398 132.42 0.91747 120.75 0.94120 113.77 0.95303 108.35 0.96185 103.78 0.96948 99.46 0.97059 95.22 0.96901 91.36 0.97053 87.30 0.96542 83.54 0.95436 79.82 0.94874 76.13 0.93975 72.37 0.93430 68.62 0.92552 64.45 0.91055 60.10 0.89467 55.88 0.88144 51.26 0.86118 45.92 0.84235 39.69 0.81197 32.21 VDD2 Pin 8 Mag Ang 0.97992 130.74 0.99110 128.32 0.98056 125.59 0.98100 122.36 0.95666 119.66 0.93969 117.38 0.80350 109.35 0.86651 131.73 0.96565 124.03 0.98040 119.87 0.98556 117.40 0.98601 114.89 0.98684 112.78 0.98870 110.59 0.98453 108.46 0.97623 106.45 0.97255 104.06 0.94871 102.09 0.90915 101.96 0.92284 103.31 0.95245 102.11 0.96874 99.91 0.97597 98.06 0.97767 95.99 0.97522 94.27 0.97159 92.53 0.96476 91.00 0.96887 89.52 0.96766 87.98 Specifications Subject to Change Without Notice 902407 D, January 2000 GaAsTEK 5310 Valley Park Drive Roanoke, VA 24019 USA www.gaastek.com Tel: 1-540-563-3949 1-888-563-3949 (USA) Fax: 1-540-563-8616 6 |
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